| PART |
Description |
Maker |
| T9G00410 T9G00412 T9G01010 T9G01012 T9G00110 T9G00 |
Phase Control SCR (1000-1200 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（1000-1200安培平均100-2200伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| HER108G-AP HER103G HER107G HER101G |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
1.0 Amp Glass Passivated High Efficient Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| DBTC-12-4 DBTC-12-4L DBTC-12-44L |
Surface Mount Directional Couplers 50蟹 5 to 1000 MHz
Surface Mount Directional Couplers 50з 5 to 1000 MHz 5 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.6 dB INSERTION LOSS-MAX
Surface Mount Directional Couplers 50 5 to 1000 MHz
Surface Mount Directional Couplers 50?/a> 5 to 1000 MHz
|
Mini-Circuits
|
| CKR05BX102KRV |
Ceramic, Military/High Reliability, MIL-39014, 1000 pF, 10%, 200 V, BX, R (0.01%/1000 Hrs), Lead Spacing = 5.08mm
|
Kemet Corporation
|
| 3296-1000 |
KR Electronics part number 3296-1000 is a 1000 MHz highpass filter
|
KR Electronics, Inc.
|
| APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| PHAWOS1000/1850/5KS-DR PHAWOS1000/1850/5KS-ST PHAW |
CAPACITOR, FILM/FOIL, 1000 V, 59 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 500 V, 54 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 60 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 57 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 97 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 45 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 750 V, 49 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 500 V, 73 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 750 V, 36 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 265 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1000 V, 27 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 354 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 78 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 171 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1000 V, 422 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1000 V, 37 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1000 V, 141 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 134 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1000 V, 81 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1000 V, 105 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1500 V, 18 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 124 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1000 V, 350 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 600 V, 236 uF, CHASSIS MOUNT
CAPACITOR, FILM/FOIL, 1000 V, 48 uF, CHASSIS MOUNT
|
Vishay Intertechnology, Inc.
|
| FAR-F5CH-940M50-L2MD FAR-F5CH-911M50-L2DL FAR-F5CH |
Piezoelectric SAW BPF
(700 to 1000 MHz)(压电表面声波带通滤波器(7001000 MHz))
Piezoelectric SAW BPF (700 to 1000 MHz)(压电表面声波带通滤波器(7001000 MHz)) SAW FILTER
Piezoelectric SAW BPF (700 to 1000 MHz)(???琛ㄩ?澹版尝甯??婊ゆ尝?è700??1000 MHz))
|
Fujitsu Limited
Fujitsu, Ltd.
FUJITSU LTD
|
| HER208G-AP HER205G HER203G-BP |
2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 ROHS COMPLIANT, PLASTIC PACKAGE-2
2.0 Amp Glass Passivated High Efficient Rectifiers 50 to 1000 Volts
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
|
Micro Commercial Components, Corp.
|
| DB207S DB206S DB205S DB201S DB202S DB203S DB204S D |
2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
|
RECTRON LTD
Rectron Semiconductor
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
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